Electrode insulator and method for fabricating the same

ABSTRACT

An electrode insulator and method for fabricating the same, wherein a T-shape electrode insulator made of inorganic dielectric material is fabricated perpendicular to the first electrode formed on the substrate, and insulating the second electrode from the first electrode. Inorganic films are used twice to form the insulator, and the T-shaped insulator fabricated is composed of two parts, the lower part is a column of ridge and the upper part is a horizontal cover to form an overhanging portion. Thereby, the overhanging portion can prevent metal film of the second electrode from forming between two insulators, so that the insulation can be achieved.

FIELD OF THE INVENTION

An electrode insulator and method for fabricating the same, particularly relates to fabrication of the organic light-emitting diode (OLED) insulator using inorganic films. The insulator and its fabrication method can be applied to the fabrication of the OLED flat panel.

BACKGROUND OF THE INVENTION

Organic light emitting diodes (OLED) are self-luminou devices with many advantages, such as very thin thickness, quick response, wide view angle, optimal resolution, high luminance, usable in flexible panel, and wide operating temperatures. OLED has been regarded as the new generation of the flat panel display technology after the thin film transistor liquid crystal display (TFT-LCD). The operating principle of the OLED is based on the light-emitting characteristics of the organic layer. As the electron and hole meet to form excitons through the organic layer, the energy promotes the light-emitting molecules to the excited state, and the light-emmitting devices with different wavelengths are generated as the excited electrons fall into the ground state. The anode is made of ITO conductive films by sputtering or evaporating adheres to the glass or transparent plastic substrate, and the cathod is made of Mg, Al or Li, etc. The light-emitting region between two electrodes consists of many organic layers, including the hole injection layer (HIL), hole transport layer (HTL), emitting layer and electron transport layer (ETL). In actual production, other layers may be included to meet different requirements.

Although OLED has many advantages, the most commanly used fabrication technology for the OLED electrode insulator disclosed in the U.S. Pat. No. 5,701,055, U.S. Pat. No. 5,962,970, U.S. Pat. No. 6,099,746, and U.S. Pat. No. 6,137,220 suggest that the insulator is produced by organic photoresists and two-mask processes. Further, the patents disclosed that positive photoresist is used to form an insulation photoresist on the substrate, and negative photoresist is used to form an inverse-triangular overhanging portion for sliver-like barrier rib. However, the insulator composed of organic photoresist is weak in mechanical strength and is easily damaged by external forces during fabrication. Besides, the insulator made of organic photoresist may precipitate organic materials that can affect the performance of other organic layers in the flat panel. Simultaneously, the insulator is not easily miniaturized for the physical limitations of the organic photoresist.

SUMMARY OF THE INVENTION

Therefore, the purpose of present invention is to construct the insulator by using inorganic films, which can enhance the mechanical strength of the insulator. Thus, the previous drawbacks can be avoided.

Another objective of present invention is to avoid the precipitation of the organic material by using inorganic insulators. The precipitation may affect the performance of other organic layers in the flat panel.

A T-shape electrode insulator made of inorganic dielectric material is fabricated perpendicular to the first electrode formed on the substrate, and insulating the second electrode from the first electrode.

The fabrication method of the invention is to produce a T-shape electrode insulator fabricated perpendicular to the first electrode formed on the substrate, and insulating the second electrode from the first electrode. The fabrication processes are described as follow.

-   -   (a) a phototonic resist is spinned on the substrate and         patterned by lithography with the first mask, and then etching         the deposition-mask on the resist.     -   (b) an inorganic dielectric thin film is deposited to form         columns of ridges of the insulator.     -   (c) the deposition-mask is stripped by lift-off technique, and         then columns of ridges are constructed.     -   (d) a photoresist is spinned on the substrate, an inorganic film         is deposited on the resist, and another photoresist is spinned         on the inorganic film.     -   (e) the top resist is patterned and developped with the second         mask to form the troughs, and the inorganic film beneath the         troughs is etched, and then the photoresist under the inorganic         film is etched through the troughs until the columns of ridges         expose themselves to the air with some height.     -   (f) an inorganic film is deposited into the troughs to form the         covers.     -   (g) both photoresist layers and the inorganic layer are         stripped, and thereby the T-shaped insulators are constructed.

The foregoing, as well as additional objects, features and advantages of the invention will be more readily apparent from the following detailed description, which proceeds with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing the electrode insulator of the present invention.

FIGS. 2 to 10 are cross-sectional views of the processes for fabricating the insulator.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 shows an insulator (20) is fabricated perpendicular to the first electrode formed on the substrate (10), and insulating the second electrode from the first electrode. The key feature is that the insulator (20) is made of SiO2-based, Siloxane-based, SiN-based or ceramic-like inorganic dielectric materials and has a T-shaped structure.

FIGS. 2 to 10 show the fabrication processes of the insulator (20). The insulator (20) has a T-shaped structure and is perpendicular to the first electrode formed on the substrate (10), insulating the second electrode from the first electrode. The fabrication processes are:

-   -   (a) A phototonic resist (31) is spinned on the substrate (10)         and patterned by lithography with the first mask (41), as shown         in FIG. 2, and then etching the deposition-mask (311) on the         resist (31).     -   (b) An inorganic dielectric thin film is deposited on the         substrat (10) through the deposition-mask (311) to form the         ridge (21) of the insulator (20), as shown in FIG. 3. The         inorganic dielectric thin film is deposited by Physical Vapor         Deposition (PVD) or Chemical Vapor Deposition (CVD), and is         selected from the SiO2-based, Siloxane-based, SiN-based, or         ceramic-like materials.     -   (c) The deposition-mask (311) is stripped by lift-off technique,         and the column of inorganic ridge (21) is constructed, as shown         in FIG. 4.     -   (d) A photoresist (32) is spinned to cover the substrate (10)         that has ridges (21) on it, an inorganic film (33) is deposited         on the resist (32) as a buffer layer, and another photoresist         (34) is spinned on the inorganic film, as shown in FIG. 5. The         inorganic dielectric thin film is deposited by Physical Vapor         Deposition (PVD) or Chemical Vapor Deposition (CVD), and is         selected from the SiO2-based, Siloxane-based, SiN-based or         ceramic-like materials.     -   (e) The top resist (34) is patterned and developped by         lithography with the second mask (42), as shown in FIG. 6, to         form the trough (50) just above the ridge (21), and the width of         the trough (50) is bigger than the ridge (21). The function of         the dielectric inorganic thin film (33) is used to be an         auto-stop developing, when the trough (50) is etched with the         second mask (42).

Thereafter, a wet etching or dry etching method is used to etch the inorganic film beneath the troughs, as shown in FIG. 7. Giving a dry etching as an example, the CF4 can be an etchant when the inorganic film (33) is SiO2. The etching reactions are CF_(4(g))→2F_((g))+CF_(2(g)) SiO_(2(g))+4F_((g))→SiF_(4(g))+2O_((g)) SiO_(2(g))+2CF_(2(g))→SiF_(4(g))+2CO_((g))

The suface profiler can be used to determine whether etch is complete during the process. Of course, the selectivity problem for the etch-masking layer (32) must be considered when selecting the etchant.

After that, O₃ gas is used to etch the photoresist (32) under the inorganic film through the troughs (50) until the columns of ridges (21) expose themselves to the air with some height. The objective of the process is to expose the ridges (21) for forming the upper covers (22).

-   -   (f) Immediately, an inorganic insulation film is deposited into         the troughs (50) to cover the outcrop of the ridges by PVD or         CVD to form the covers (22). The inorganic dielectric thin film         is selected from the SiO2-based, Siloxane-based, SiN-based or         ceramic-like materials

Attention should be paid to the adhesive force between the ridge (21) and the cover (22) and the shadow effect induced by the thickness of the cover (22).

-   -   (g) Finally, both photoresist layers (34, 32) and the inorganic         layer (33) are stripped, and thereby the T-shaped insulator         assembled by the ridge (21) and cover (22) is constructed.

Inorganic films are used twice to form the T-shaped insulator (20), and the T-shaped insulator (20) is composed of two parts, the lower part is a column of ridge (21) and the upper part is a horizontal cover (22) to form an overhanging portion. The overhanging portion can prevent the metal film of the second electrode being formed between two insulators (20), so that the insulation can be achieved.

As compare with other technologies, the merits in the present invention are:

-   -   1. Instead of the frangible, conventional, organic photoresist,         the insulator is constructed by using inorganic films in this         invention, which has stronger mechanical strength.     -   2. The Insulator made of inorganic films is stronger, and in         addition, can avoid the precipitation of the organic material         that may affect the performance of other organic materials in         the flat panel and damages the display panel. 

1. An electrode insulator fabricated perpendicular to a first electrode formed on a substrate, and insulating a second electrode from said first electrode, wherein, the electrode insulator is made of inorganic dielectric material; and the electrode insulator has a T-shaped cross-sectional view.
 2. The electrode insulator of claim 1, wherein said inorganic dielectric thin film is selected from the SiO2-based, Siloxane-based, SiN-based or ceramic-like materials.
 3. A method for fabricating electrode insulator perpendicular to a first electrode formed on a substrate, and insulating a second electrode from said first electrode, wherein the fabrication processes are: (a) a phototonic resist is spinned on the substrate and patterned by lithography with a first mask, and then etching the deposition-mask on the resist; (b) an inorganic dielectric thin film with insulation is deposited to form a column of ridge of the insulator; (c) the deposition-mask is stripped by lift-off technique, and a column of ridge is constructed; (d) a photoresist is spinned on the substrate, an inorganic film is deposited on the resist, and another photoresist is spinned on the inorganic film. (e) a top resist is patterned and developped with a second mask to form troughs, the inorganic film beneath the troughs is etched, and then photoresist under the inorganic film is etched through the troughs until the columns of ridges expose themselves to the air with desired height; (f) an inorganic film is deposited into the trough to form the cover which covers the ridge; and (g) both photoresist layers and the inorganic layer are stripped, and thereby the T-shaped insulator assembled by the ridge and the cover is constructed.
 4. The method for fabricating electrode insulator of claim 3, wherein the deposition method is Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD).
 5. The method for fabricating electrode insulator of claim 3, wherein the inorganic dielectric thin film is made of the SiO2-based, Siloxane-based, SiN-based or ceramic-like materials.
 6. The method for fabricating electrode insulator of claim 3, wherein the trough is located above the ridge.
 7. The method for fabricating electrode insulator of claim 3, wherein the trough is wider than the ridge. 